Light-emitting diode die packages and illumination apparatuses using same

ABSTRACT

The present invention relates to an LED die package, which has a light-emitting diode die having a sapphire layer, a first doped layer doped with a p- or n-type dopant, and a second doped layer doped with a different dopant from that doped in the first doped layer. A surface of the sapphire layer opposite to the surface on which the first doped layer is disposed is formed with generally inverted-pyramidal-shaped recesses and overlaid with a phosphor powder layer. Each of the first and the second doped layers has an electrode-forming surface formed with an electrode, on which an insulation layer is disposed and formed with exposure holes for exposing the electrodes. The exposure holes are each filled with an electrically conductive linker.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to light-emitting diode (LED) die packagesand illumination apparatuses using the same, and more particularly, tohighly reliable LED die packages and illumination apparatuses using thesame.

2. Description of the Prior Art

As the global trend of energy saving continuously progresses,light-emitting diodes play an increasingly important role in thisregard, in view of the fact that they have been used more and more inthe replacement of traditional light sources. However, the thermaldissipation ability of LEDs should still be improved to realize a moreideal light source.

In view of the above, the inventor has devised LED die packages, as wellas illumination apparatuses using the same, to fulfill the need in thisrespect.

SUMMARY OF THE INVENTION

Accordingly, an object of the invention is to provide an LED die packageand an illumination apparatus using the same.

In order to achieve this object, a light-emitting diode die packageaccording to a technical feature of the invention is provided, whichcomprises a light-emitting diode die having a sapphire layer, a firstdoped layer disposed on the sapphire layer and doped with a p- or n-typedopant, and a second doped layer disposed on the first doped layer anddoped with a different dopant from that doped in the first doped layer,wherein a surface of the sapphire layer opposite to the surface on whichthe first doped layer is disposed is formed with a plurality ofgenerally inverted-pyramidal-shaped recesses, and wherein each of thefirst doped layer and the second doped layer has an electrode-formingsurface formed with an electrode; a phosphor powder layer disposed onthe surface of the sapphire layer formed with the recesses; aninsulation layer disposed on the electrode-forming surfaces and formedwith a plurality of exposure holes for exposing the electrodescorresponding thereto; and a plurality of electrically conductivelinkers, each being formed within one of the exposure holes.

According to another technical feature of the invention, alight-emitting diode die package is provided, which comprises at leasttwo light-emitting diode dies, each having a sapphire layer, a firstdoped layer disposed on the sapphire layer and doped with a p- or n-typedopant, and a second doped layer disposed on the first doped layer anddoped with a different dopant from that doped in the first doped layer,wherein each of the first doped layers and the second doped layers hasan electrode-forming surface formed with an electrode, and wherein a gapis provided between the first doped layers of two light-emitting diodedies, so that a continuous metal layer present between the first dopedlayers of neighboring LED dies is divided; a first insulation layerdisposed on the electrode-forming surfaces of the first doped layers andthe second doped layers, the first insulation layer being formed with aplurality of exposure holes for exposing the corresponding electrodes ofthe first doped layers and the second doped layers; a second insulationlayer disposed on the first insulation layer, the second insulationlayer being formed with a plurality of communication holes and aplurality of through holes, wherein each of the communication holes isadapted for communicating two exposure holes with each other, with thetwo exposure holes exposing two electrodes that have opposite polarityand reside in neighboring light-emitting diode dies, and wherein each ofthe through holes is registered with an exposure hole for exposing anelectrode that need not be electrically connected to any electrodelocated in neighboring light-emitting diode dies; conductors formedwithin the exposure holes, the communication holes and the throughholes, so that the light-emitting diode dies are electrically connectedin series; a cover layer disposed on the second insulation layer andformed with a plurality of open holes, each being registered with athrough hole; and a plurality of electrically conductive linkers formedwithin the open holes and adapted for electrically connecting theconductors located within the through holes to an external circuit.

According to still another technical feature of the invention, alight-emitting diode die package is provided, which comprises alight-emitting diode die having a sapphire layer, a first doped layerdisposed on the sapphire layer and doped with a p- or n-type dopant, anda second doped layer disposed on the first doped layer and doped with adifferent dopant from that doped in the first doped layer, wherein asurface of the sapphire layer opposite to the surface on which the firstdoped layer is disposed is formed with a plurality of generallyinverted-pyramidal-shaped recesses, and wherein each of the first dopedlayer and the second doped layer has an electrode-forming surface formedwith an electrode, and wherein the recesses comprise inclined wallscoated with metal layers; a support plate having a supporting surface,on which conductive contacts are disposed; a heat-dissipating film layeroverlaid on the supporting surface of the supporting layer; a thermalconductive film layer overlaid on the heat-dissipating film layer; and acircular seat disposed on the thermal conductive film layer and havingan upper edge, the upper edge of the circular seat being provided withconductive contacts, wherein the light-emitting diode die is positionedat a central portion of the circular seat by being secured to thethermal conductive film layer with a metal connecting layer, and whereinthe electrodes provided on the first doped layer and the second dopedlayer are electrically connected to the conductive contacts provided onthe circular seat via wires and the conductive contacts provided on thecircular seat are electrically connected to the corresponding conductivecontacts provided on the support plate via wires.

According to still another technical feature of the invention, alight-emitting diode die package is provided, which comprises alight-emitting diode die having a sapphire layer, a first doped layerdisposed on the sapphire layer and doped with a p- or n-type dopant, anda second doped layer disposed on the first doped layer and doped with adifferent dopant from that doped in the first doped layer, wherein asurface of the sapphire layer opposite to the surface on which the firstdoped layer is disposed is formed with a plurality of generallyinverted-pyramidal-shaped recesses, and wherein each of the first dopedlayer and the second doped layer has an electrode-forming surface formedwith an electrode; a phosphor powder layer disposed on the surface ofthe sapphire layer formed with the recesses; an insulation layerdisposed on the electrode-forming surfaces and formed with a pluralityof exposure holes for exposing the electrodes corresponding thereto; aplurality of electrically conductive linkers, each being formed withinone of the exposure holes; a support plate having a supporting surface,on which conductive contacts are disposed; a heat-dissipating film layeroverlaid on the supporting surface of the support plate and formed withat least two through holes that communicate between an upper surface anda lower surface thereof, wherein the light-emitting diode die is securedto the heat-dissipating film layer, so that the electrically conductivelinkers are electrically connected to the conductive contacts of thesupport plate via the corresponding through holes provided in theheat-dissipating film layer; and a circular seat, placed on theheat-dissipating film layer, so that the light-emitting diode die islocated at a central portion of the circular seat.

According to still another technical feature of the invention, anillumination apparatus is provided, which comprises an elongated housingprovided at both ends with an electrode adapted for being connected toan external socket, the housing having a base part and a transparentpart, wherein the base part has a chamber and a mounting surface; apower supplying circuit unit disposed within the chamber of the basepart and provided with an input terminal and an output terminal whichare electrically connected to the electrodes located at both ends of thehousing; and a light-emitting unit including a mounting substratedisposed on the mounting surface of the base part and a plurality oflight-emitting diode die packages according to the invention placed on amounting surface of the mounting substrate, wherein the mounting surfaceof the mounting substrate is overlaid with predetermined circuit traceselectrically connected to the output terminal of the power supplyingcircuit unit, and wherein the electrically conductive linkers of thelight-emitting diode die packages are electrically connected to thecorresponding circuit traces overlaid on the mounting substrate.

According to still another technical feature of the invention, anillumination apparatus is provided, which comprises an elongated housingprovided at both ends with an electrode adapted for being connected toan external socket, the housing having a base part and a transparentpart, wherein the base part has a chamber and a mounting surface mountedwith predetermined circuit traces; a power supplying circuit unitdisposed within the chamber of the base part and provided with an inputterminal and an output terminal which are electrically connected to theelectrodes located at both ends of the housing; and a light-emittingunit including a plurality of light-emitting diode die packagesaccording to the invention placed on the mounting surface of the basepart, wherein the electrodes of the light-emitting diode die packagesare electrically connected to the corresponding circuit traces overlaidon the mounting surface of the base part.

According to yet still another technical feature of the invention, anillumination apparatus is provided, which comprises a housing includinga body, a transparent cap and an adapter, wherein the body has an uppersurface and an accommodating chamber accessible through a lower open endof the body, and wherein the transparent cap is fixed to an upper end ofthe body, and wherein the adapter is mounted at the lower open end ofthe body; a power supplying circuit unit having a power supplying modulewhich is placed into the accommodating chamber through the lower openend of the body, wherein the power supplying module includes inputterminals electrically connected to a positive-voltage electrode and anegative-voltage electrode of the adapter; and a light-emitting unitincluding a substrate mounted on the upper surface of the body and aplurality of light-emitting diode die packages according to theinvention operatively mounted on the substrate, wherein a surface of thesubstrate on which the light-emitting diode die packages are mounted isoverlaid with predetermined circuit traces electrically connected to theelectrodes of the light-emitting diode die packages, and wherein thepower supplying module has an output terminal which is electricallyconnected to the corresponding circuit traces overlaid on the substratevia a wire, so that the light-emitting diode die packages can receiveelectric power from the power supplying module.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and effects of the invention willbecome apparent with reference to the following description of thepreferred embodiments taken in conjunction with the accompanyingdrawings, in which:

FIGS. 1 to 4 are schematic, cross-sectional flowcharts of a method forpackaging an LED die package according to the first preferred embodimentof the invention;

FIGS. 5 to 8 are schematic, cross-sectional flowcharts of a method forpackaging an LED die package which includes two or more LED dieselectrically connected in series;

FIGS. 9 to 10 are schematic, cross-sectional flowcharts of analternative method to that shown in FIGS. 5-8 for packaging an LED diepackage which includes two or more LED dies electrically connected inseries;

FIG. 11 is an equivalent circuit diagram for an LED die package whichincludes two or more LED dies electrically connected in series;

FIGS. 12 to 13 are schematic, cross-sectional flowcharts of a method forpackaging an LED die package according to the second preferredembodiment of the invention;

FIG. 14 is a schematic cross-sectional view of an LED die packageaccording to the third preferred embodiment of the invention;

FIG. 15 is a schematic cross-sectional view of an LED die packageaccording to the four preferred embodiment of the invention;

FIG. 16 is a schematic cross-sectional view of an LED die packageaccording to the fifth preferred embodiment of the invention;

FIGS. 17 to 19 are schematic cross-sectional views of alternativeexamples of the phosphor layer 103 in the first preferred embodiment;

FIGS. 20 and 21 are schematic, cross-sectional flowcharts of analternative method for packaging an LED die package according to thefirst preferred embodiment of the invention;

FIGS. 22 and 23 are schematic cross-sectional views of an illuminationapparatus that uses an LED die package according to the invention;

FIG. 24 is schematic cross-sectional view of an alternative example ofthe illumination apparatus shown in FIGS. 22 and 23;

FIGS. 25 to 27 are schematic cross-sectional views of anotherillumination apparatus that uses an LED die package according to theinvention;

FIGS. 28 and 29 are schematic diagrams illustrating a light-emittingunit of an illumination apparatus that uses an LED die package accordingto the invention;

FIG. 30 is a schematic cross-sectional view of an alternative example ofthe illumination apparatus shown in FIG. 27; and

FIG. 31 is a schematic cross-sectional view of an alternative example ofthe illumination apparatus shown in FIG. 27.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Before the present invention is described in greater detail, it shouldbe noted that the same or like elements are denoted by the samereference numerals throughout the disclosure. Moreover, the elementsshown in the drawings are not illustrated in actual scale, but areexpressly illustrated to explain in an intuitive manner the technicalfeature of the invention disclosed herein.

FIGS. 1 to 4 are schematic, cross-sectional flowcharts of a method forpackaging an LED die package according to the first preferred embodimentof the invention.

Referring to FIGS. 1-4, a light-emitting diode (LED) die 1 is provided.It should be noted that the packaging method according to the inventionis carried out on an intact wafer and the LED die 1 remains undiced fromthe wafer. For clarity, FIGS. 1-3 omit the LED dies neighboring to theLED die 1.

The LED die 1 has a sapphire layer 10, a first doped layer 11 disposedon the sapphire layer 10 and doped with a p- or n-type dopant, and asecond doped layer 12 disposed on the first doped layer 11 and dopedwith a different dopant from that doped in the first doped layer 11.

Next, as shown in FIGS. 1 and 2, a surface 100 of the sapphire layer 10opposite to the surface on which the first doped layer 11 is disposed issubjected to an etching process, so that the surface 100 is formed witha plurality of generally inverted-pyramidal-shaped recesses 101 andturned into a roughened surface 100.

It should be noted that the formation of the recesses 101 is not limitedto by performing an etching process. Any process adapted for rougheningthe surface 100 of the sapphire layer 10 can be used in the invention.

As shown in FIG. 3, a phosphor powder layer 103 is formed on the surface100 of the sapphire layer 10 in such a manner that the phosphor powderlayer 103 extends into the recesses 101.

Since the first and second doped layers 11 and 12 have a refractiveindex of 2.4, the sapphire layer 10 has a refractive index of 1.7 andthe phosphor layer 103 has a refractive index of 1.4, the structuredescribed above achieves a multiple refraction effect and increases thelight extraction efficiency by a factor of 24-50%.

As shown in FIG. 4, the first doped layer 11 and the second doped layer12 have electrode-forming surfaces 110,120 formed with electrodes111,121, on which an insulation layer 104 is disposed after formation ofthe phosphor layer 103. The insulation layer 104 is subjected toexposure and development processes to be formed with several exposureholes 1040 for exposing corresponding electrodes 111,121. Each of theexposure holes 1040 is then formed inside with an electricallyconductive linker 2 for electrically connecting the electrodes 111,121to external circuit components (not shown). Finally, the resultantstructure is subjected to a dicing process to give an LED die packageaccording to the first preferred embodiment of the invention as shown inFIG. 4.

It should be noted that the insulation layer 104 can be made of atransparent material doped with phosphor powder. In addition, theelectrically conductive linker 2 is preferably fabricated by laminating1 to 6 metal layers together using a vapor depositing process and/or anelectro-plating process. For example, the electrically conductive linker2 is preferably made of a combination of a silver layer, a diamond filmlayer, a copper layer, a nickel layer and a gold layer, a combination ofa silver layer, a copper layer, a nickel layer and a gold layer, or acombination of a chromium layer, a diamond film layer, a silver layer, acopper layer, a nickel layer and a gold layer.

Now referring to FIGS. 5-8, in the case where the LED die packageaccording to the invention includes two or more LED dies electricallyconnected in series, an LED wafer W, prior to being processed as shownin FIG. 2 or subsequent to being processed as shown in FIG. 3, issubjected to a dicing process along a dicing line CL, so as to generatea gap S between the first doped layers 11 of two neighboring LED dies 1,thereby dividing a continuous metal layer (not shown) present betweenthe first doped layers 11 of neighboring LED dies 1.

While FIG. 6 demonstrates that the dicing process is carried out to adepth that reaches the sapphire layer 10, it should be noted that thedicing process may be performed to a less extent, so long as thecontinuous metal layer present between the first doped layers 11 ofneighboring LED dies 1 is divided.

Next, a first insulation layer 104 is formed on the surfaces 110,120 ofthe first doped layers 11 and the second doped layers 12, with theinsulative material being filled into the gaps S. The first insulationlayer 104 is subjected to exposure and development processes to beformed with a plurality of exposure holes 1040 for exposingcorresponding electrodes 111,121 on the first doped layers 11 and thesecond doped layers 12. A second insulation layer 106 is then formed onthe first insulation layer 104. The second insulation layer 106 issubjected to exposure and development processes to be formed with aplurality of communication holes 1060 and a plurality of through holes1061. Each of the communication holes 1060 is adapted for communicatingtwo exposure holes 1040 with each other, with the two exposure holes1040 exposing two electrodes 111,121 that have opposite polarity andreside in neighboring LED dies 1. The through hole 1061 are adapted forexposing the electrodes 111, 121 that need not be electrically connectedto any electrodes 111, 121 located in the neighboring LED dies 1. Forexample, in the case where the LED die package includes ten LED dieselectrically connected in series, an electrode 121 located in the firstLED die 1 and an electrode 111 located in the tenth LED die 1 areexposed through the exposure holes 1040 and the through holes 1061registered therewith, as shown in FIG. 8.

Then, conductors 108 are formed within the exposure holes 1040, thecommunication holes 1060 and the through holes 1061, so that the LEDdies 1 are electrically connected in series. A cover layer 107 is thendisposed on the second insulation layer 106 and is subjected to exposureand development processes to be formed with a plurality of open holes1070, each being registered with a through hole 1061. Electricallyconductive linkers 2 are then formed within the open holes 1070 and usedfor electrically connecting to external circuit components. Finally, theresultant structure is subjected to a dicing process to give individualLED die packages having predetermined amounts of LED dies connected inseries or in parallel.

Similar to those described in the embodiments above, the insulationlayers 104,106,107 are preferably made of transparent material dopedwith phosphor powder, and the conductors 108 and the electricallyconductive linkers 2 are preferably formed by laminating 1 to 6 metallayers together using a vapor depositing process and/or anelectro-plating process.

FIGS. 9 and 10 are schematic, cross-sectional flowcharts of analternative method to that shown in FIGS. 5-8 for packaging an LED diepackage which includes two or more LED dies electrically connected inseries.

As shown in FIG. 9, an LED wafer W, prior to being processed as shown inFIG. 2 or subsequent to being processed as shown in FIG. 3, is formedwith a cover layer 105 on the electrode-mounting surfaces 110, 120 ofthe first doped layers 11 and the second doped layers 12. The coverlayer 105 is subjected to exposure and development processes to beformed with a plurality of via holes 1050 for exposing portions of thesurfaces 110 of the first doped layers 11 that are proximal to thedicing lines CL. The portions of the first doped layers 11 which areexposed by the via holes 1050 are then removed by chemical etching, soas to divide a continuous metal layer (not shown) present between thefirst doped layers 11 of neighboring LED dies 1. Similarly, while FIG. 9demonstrates that the dicing process is carried out to a depth thatreaches the sapphire layer 10, the dicing process may be performed to aless extent, so long as the continuous metal layer present between thefirst doped layers 11 of neighboring LED dies 1 is divided.

Next, the cover layer 105 is removed and the processes shown in FIGS. 6to 8 are performed afterwards to result in a structure shown in FIG. 10.Finally, the resultant structure is subjected to a dicing process togive individual LED die packages having predetermined amounts of LEDdies electrically connected in series or in parallel.

Similar to those described in the embodiments above, the insulationlayers 104,106,107 are preferably made of transparent material dopedwith phosphor powder, and the conductors 108 and the electricallyconductive linkers 2 are preferably formed by laminating 1 to 6 metallayers together using a vapor depositing process and/or anelectro-plating process.

FIG. 11 is an equivalent circuit diagram for the LED dies connected inseries shown in FIGS. 8 and 10.

As shown in FIG. 11, each of the LED dies 1 may be electricallyconnected in parallel to a fuse unit 6 made of SiOH₄. When an LED die 1fails to work and causes an open circuit, the fuse unit 6 correspondingthereto melts down due to overvoltage and is therefore short-circuitedto turn into an electrically connected state. Hence, even if one of theLED dies 1 connected in series fails to function normally, the rest ofthem would remain operating. The conventional problem in this respect isovercome accordingly.

FIGS. 12 to 13 are schematic, cross-sectional flowcharts of a method forpackaging an LED die package according to the second preferredembodiment of the invention;

Contrary to the first preferred embodiment, this embodiment as shown inFIG. 12 is featured by, after formation of recesses 101 on a sapphirelayer 10, coating a metal layer 102 on inclined walls of the recesses101. The LED wafer is then subjected to a dicing process to obtain aplurality of LED dies shown in FIG. 12.

Next, a support plate 3 is prepared as shown in FIG. 13. The supportplate 3 has a supporting surface 30, on which a plurality of conductivecontacts 31 and predetermined circuit traces (not shown) for beingelectrically connected to the conductive contacts 31 are disposed. Thesupporting surface 30 of the support plate 3 is overlaid with aheat-dissipating film layer 32 made by a material having a thermalconductivity between 900 W/(m·K) to 1200 W/(m·K), such as a diamondmaterial. The heat-dissipating film layer 32 is overlaid with a thermalconductive film layer 33 made by a material having a thermalconductivity between 400 W/(m·K) to 700 W/(m·K), such as pyrolyticgraphite.

A circular seat 34 made of silicon is then placed on the thermalconductive film layer 33. An upper edge of the circular seat 34 isprovided with conductive contacts 340. The LED die shown in FIG. 13 isthen positioned at a central portion of the circular seat 34 by beingsecured to the thermal conductive film layer 33 with a metal connectinglayer 35. The electrodes 111,121 provided on the first doped layer 11and the second doped layer 12 are electrically connected to theconductive contacts 340 provided on the circular seat 34 via wires 36,whereas the conductive contacts 340 provided on the circular seat 34 areelectrically connected to the corresponding conductive contacts 31provided on the support plate 3 via wires 37.

Finally, a phosphor layer 38 is formed at the central portion of thecircular seat 34 in a manner covering the LED die.

FIG. 14 is a schematic cross-sectional view of an LED die packageaccording to the third preferred embodiment of the invention. An LED dieshown in FIG. 4 and a support plate 4 are first provided. The supportplate 4 has a supporting surface 40, on which a plurality of conductivecontacts 41 and predetermined circuit traces (not shown) are disposed.The supporting surface 40 of the support plate 4 is overlaid with aheat-dissipating film layer 32 described in the second preferredembodiment. Contrary to the second preferred embodiment, theheat-dissipating film layer 32 used herein is formed with at least twothrough holes 320 that communicate between the upper and lower surfacesof the layer 32.

The LED die shown in FIG. 4 is secured to the heat-dissipating filmlayer 32 by a suitable process, such as reflow soldering, so that theelectrically conductive linkers 2 are electrically connected to theconductive contacts 41 of the support plate 4 via the correspondingthrough holes 320 in the heat-dissipating film layer 32. A circular seat34 described in the second preferred embodiment is then placed on theheat-dissipating film layer 32, so that the LED die is located at acentral portion of the circular seat 34.

Finally, a phosphor layer 38 is formed at the central portion of thecircular seat 34 in a manner covering the LED die. It should be noted,however, that a phosphor layer 103 is optional in this embodiment andcan be omitted due to the provision of the phosphor layer 38.

FIG. 15 is a schematic cross-sectional view of an LED die packageaccording to the fourth preferred embodiment of the invention. Contraryto the second preferred embodiment, this embodiment includes two or moreLED dies electrically connected in series or in parallel. It should benoted that the LED dies according to this embodiment may be electricallyconnected in series, in parallel, or partly in series and partly inparallel. Since this embodiment merely differs from the second preferredembodiment in the amount of LED dies mounted in an LED die package, thedetails thereof are omitted for brevity.

FIG. 16 is a schematic cross-sectional view of an LED die packageaccording to the fifth preferred embodiment of the invention. Contraryto the third preferred embodiment, this embodiment includes two or moreLED dies electrically connected in series or in parallel. It should benoted that the LED dies according to this embodiment may be electricallyconnected in series, in parallel, or partly in series and partly inparallel. Since this embodiment merely differs from the third preferredembodiment in the amount of LED dies mounted in an LED die package, thedetails thereof are omitted for brevity.

FIGS. 17 to 19 are schematic cross-sectional views of alternativeexamples of the phosphor layer 103 in the first preferred embodiment.

As shown in FIG. 17, the phosphor layer 103 disposed on the surface 100of the sapphire layer 10 is a yellow phosphor layer. It should be notedthat the phosphor layer 103 is provided to extensively cover sidesurfaces of the sapphire layer 10.

As shown in FIG. 18, the phosphor layer 103 disposed on the surface 100of the sapphire layer 10 is composed of a red phosphor layer 103-1 and agreen phosphor layer 103-2. It should be noted that the phosphor layer103 is provided to extensively cover side surfaces of the sapphire layer10.

As shown in FIG. 19, the phosphor layer 103 disposed on the surface 100of the sapphire layer 10 is composed of a red phosphor layer 103-1, agreen phosphor layer 103-2 and a blue phosphor layer 103-3. It should benoted that the phosphor layer 103 is provided to extensively cover sidesurfaces of the sapphire layer 10.

FIGS. 20 and 21 are schematic, cross-sectional flowcharts of analternative method for packaging an LED die package according to thefirst preferred embodiment of the invention. As shown in FIG. 20,contrary to the first preferred embodiment, a heat-dissipating filmlayer 32 or a thermal conductive film layer 33 described in the secondpreferred embodiment is disposed on portions of the electrode-mountingsurfaces 110,120 that are exposed by the exposure holes 1040, after theformation of the exposure holes 1040 in the insulation layer 104. Theheat-dissipating film layer 32 or the thermal conductive film layer 33is then overlaid with a high thermal conductive metal layer 34 composedof a nickel layer combined with a gold layer, or an aluminum layercombined with a copper layer. It should be noted, however, that themetal layer 34 may be a copper layer. Alternatively, the metal layer 34may be made of any suitable metal or alloy, such as Al, AlN₃, Cu, BN₃and the like.

A protective layer 109 is then formed on the insulation layer 104. Theprotective layer 109 is then subjected to exposure and developmentprocesses, so that the protective layer 109 is removed other than theportion located between the electrode 111 of the first doped layer 11and the electrode 121 of the first doped layer 12. Finally, the metallayers 34 are each overlaid with an electrically conductive linker 2 forconnection to external circuits. According to this embodiment, when theLED die package is mounted, for example, on a printed circuit board byusing a reflow soldering process, the residual portion of the protectivelayer 109 functions to prevent the melted electrically conductivelinkers 2 disposed on the electrode 111 of the first doped layer 11 andthe electrode 121 of the first doped layer 12, respectively, fromcontacting each other and causing a short circuit.

Similarly, the insulation layer 104 and the protective layer 109 arepreferably made by a transparent material doped with phosphor powder.

FIGS. 22 and 23 are schematic cross-sectional views of an illuminationapparatus that uses an LED die package according to the invention.

The illumination apparatus includes an elongated housing 5, a powersupplying circuit unit 8 and a light-emitting unit 7.

The housing 5 is composed of a base part 5 a and a transparent part 5 b.The base part 5 a has a chamber 50 for accommodating the power supplyingcircuit unit 8 and a mounting surface 52 for receiving thelight-emitting unit 7.

The power supplying circuit unit 8 disposed within the chamber 50 isprovided with an input terminal 81 and an output terminal 82, which areelectrically connected to electrodes 51 located at both ends of thehousing 5 and acting like the electrodes provided at both ends of aconventional fluorescent lamp tube.

The light-emitting unit 7 includes a mounting substrate 70 disposed onthe mounting surface 52 of the base part 5 a and a plurality of LED diepackages 71 placed on amounting surface 700 of the mounting substrate70. The mounting surface 700 of the mounting substrate 70 is overlaidwith predetermined circuit traces (not shown) electrically connected tothe output terminal 82 of the power supplying circuit unit 8. Theelectrically conductive linkers (see FIG. 4) of the LED die packages 71are electrically connected to the corresponding circuit traces overlaidon the mounting substrate 70. It should be noted that the LED diepackages 71 used herein are not limited to those described in theembodiments according to the invention but include any suitable LED diepackages for the purpose of the invention.

FIG. 24 is schematic cross-sectional view of an alternative example ofthe illumination apparatus shown in FIGS. 22 and 23.

As shown in FIG. 24, this embodiment differs from the illuminationapparatus shown in FIG. 22 in that circuit traces 701 are mounted on amounting surface 51 of the base part 5 a, and in that the LED diepackages 71 are directly mounted on the mounting surface 51 andelectrically connected to the corresponding circuit traces. As a result,the mounting substrate 70 is omitted.

FIGS. 25 to 27 are schematic cross-sectional views of anotherillumination apparatus that uses an LED die package according to theinvention.

As shown in FIGS. 25 to 27, the illumination apparatus includes ahousing 5′, a power supplying circuit unit 8′ and a light-emitting unit7′.

The housing 5′ includes a body 53, a transparent cap 54 and an adapter55. The body 53 has an upper surface 530 for receiving a substrate 70 ofthe light-emitting unit 7′ and an accommodating chamber 531 foraccommodating a power supplying module 80 of the power supplying circuitunit 8′. The accommodating chamber 531 is accessible through a loweropen end of the body 53.

The transparent cap 54 is fixed to an upper end of the body 53, so as toallow the transmission of light from the light-emitting unit 7′ disposedon the upper surface 530 of the body 53 to outside of the apparatus.

According to the embodiment, the adapter 55 is configured as an E27-typeadapter and mounted at the lower open end of the body 53.

The power supplying circuit unit 8′ has a power supplying module 80which is placed into the accommodating chamber 531 through the loweropen end of the body 53. The power supplying module 80 includes inputterminals 81 electrically connected to a positive-voltage electrode anda negative-voltage electrode of the adapter 55.

The light-emitting unit 7′ includes a substrate 70 mounted on the uppersurface 530 of the body 53 and a plurality of LED die packages 71operatively mounted on the substrate 70. A surface of the substrate 70on which the LED die packages 71 are mounted is overlaid withpredetermined circuit traces (not shown) for electrical connection tothe electrodes of the LED die packages 71. The power supplying module 80has an output terminal 82 which is electrically connected to thecorresponding circuit traces overlaid on the substrate 70 via a wire 83,so that the LED die packages 71 can receive electric power from thepower supplying module 80.

It should be noted that the LED die packages 71 used herein may be anyof the LED die packages described in the embodiments above. In addition,as shown in FIGS. 28 and 29, the light-emitting unit 7′ may furtherinclude a circular ring 72 disposed on the substrate 70 in a mannersurrounding the LED die packages 71 and a phosphor powder 73 disposed inthe circular ring 72 in a manner covering the LED die packages 71.Further, the transparent cap 54 of the housing 5′ may be configured intoother shapes, such as those shown in FIGS. 30 and 31.

In conclusion, the LED die packages and the illumination apparatusesusing the same as disclosed herein can surely achieve the intendedobjects and effects of the invention by virtue of the structuralarrangements and operating steps described above.

While the invention has been described with reference to the preferredembodiments above, it should be recognized that the preferredembodiments are given for the purpose of illustration only and are notintended to limit the scope of the present invention and that variousmodifications and changes, which will be apparent to those skilled inthe relevant art, may be made without departing from the spirit of theinvention and the scope thereof as defined in the appended claims.

1. A light-emitting diode die package, comprising: a light-emittingdiode die having a sapphire layer, a first doped layer disposed on thesapphire layer and doped with a p- or n-type dopant, and a second dopedlayer disposed on the first doped layer and doped with a differentdopant from that doped in the first doped layer, wherein a surface ofthe sapphire layer opposite to the surface on which the first dopedlayer is disposed is formed with a plurality of generallyinverted-pyramidal-shaped recesses, and wherein each of the first dopedlayer and the second doped layer has an electrode-forming surface formedwith an electrode; a phosphor powder layer disposed on the surface ofthe sapphire layer formed with the recesses; an insulation layerdisposed on the electrode-forming surfaces and formed with a pluralityof exposure holes for exposing the electrodes corresponding thereto; anda plurality of electrically conductive linkers, each being formed withinone of the exposure holes.
 2. The light-emitting diode die packageaccording to claim 1, wherein the recesses comprise inclined wallscoated with metal layers.
 3. The light-emitting diode die packageaccording to claim 1, wherein the phosphor layer is selected from thegroup consisting of a yellow phosphor layer, a combined phosphor layerof a red phosphor layer with a green phosphor layer, and a combinedphosphor layer of a red phosphor layer, a green phosphor layer with ablue phosphor layer.
 4. The light-emitting diode die package accordingto claim 1, which further comprises: a thermal conductive film layerdisposed on portions of the electrode-mounting surfaces that are exposedby the exposure holes; a high thermal conductive metal layer disposed onthe thermal conductive film layer and composed of a metal materialselected from the group consisting of a nickel layer combined with agold layer, and an aluminum layer combined with a copper layer; and aprotective layer disposed on the insulation layer, wherein theprotective layer is patterned, so that only a portion of the protectivelayer located between the electrode of the first doped layer and theelectrode of the first doped layer remains, and wherein the electricallyconductive linkers are disposed on the high thermal conductive metallayer.
 5. The light-emitting diode die package according to claim 1,wherein each of the electrically conductive linkers is fabricated bylaminating 1 to 6 metal layers together using a vapor depositing processand/or an electro-plating process.
 6. The light-emitting diode diepackage according to claim 5, wherein the electrically conductivelinkers are composed of a silver layer, a diamond film layer, a copperlayer, a nickel layer and a gold layer; or a silver layer, a copperlayer, a nickel layer and a gold layer; or a chromium layer, a diamondfilm layer, a silver layer, a copper layer, a nickel layer and a goldlayer.
 7. An illumination apparatus, comprising: an elongated housingprovided at both ends with an electrode adapted for being connected toan external socket, the housing having a base part and a transparentpart, wherein the base part has a chamber and a mounting surface mountedwith predetermined circuit traces; a power supplying circuit unitdisposed within the chamber of the base part and provided with an inputterminal and an output terminal which are electrically connected to theelectrodes located at both ends of the housing; and a light-emittingunit including a plurality of light-emitting diode die packages placedon the mounting surface of the base part, wherein the electrodes of thelight-emitting diode die packages are electrically connected to thecorresponding circuit traces overlaid on the mounting surface of thebase part; wherein the light-emitting diode die packages each comprise:a light-emitting diode die having a sapphire layer, a first doped layerdisposed on the sapphire layer and doped with a p- or n-type dopant, anda second doped layer disposed on the first doped layer and doped with adifferent dopant from that doped in the first doped layer, wherein asurface of the sapphire layer opposite to the surface on which the firstdoped layer is disposed is formed with a plurality of generallyinverted-pyramidal-shaped recesses, and wherein each of the first dopedlayer and the second doped layer has an electrode-forming surface formedwith an electrode; a phosphor powder layer disposed on the surface ofthe sapphire layer formed with the recesses; an insulation layerdisposed on the electrode-forming surfaces and formed with a pluralityof exposure holes for exposing the electrodes corresponding thereto; anda plurality of electrically conductive linkers, each being formed withinone of the exposure holes.